| PART |
Description |
Maker |
| HN29W12811T-60 |
128M AND type Flash Memory More than 8,029-sector (135,657,984-bit)
|
Hitachi,Ltd.
|
| HN29W12811 HN29W12811T-60 |
128M AND type Flash Memory More than 8,029-sector (135,657,984-bit)
|
Hitachi Semiconductor
|
| MB84SF6H6H6L2-70 MB84SF6H6H6L2-70PBS |
3 Stacked MCP (Multi-Chip Package) FLASH & FLASH & FCRAM 128M (X16) Burst FLASH MEMORY & 128M (X16) Page/Burst Mobile FCRAM
|
Spansion Inc.
|
| S29GL01GP90FFI012 S29GL01GP90FFIR12 S29GL128P11FFI |
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 3.0伏只页面模式闪存具有90纳米MirrorBit工艺技
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 128M X 1 FLASH 3V PROM, 110 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 128M X 1 FLASH 3V PROM, 90 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 128M X 1 FLASH 3V PROM, 100 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 128M X 1 FLASH 3V PROM, 90 ns, PDSO56
|
Spansion, Inc.
SPANSION LLC
|
| MX29GL033MTTC-70G MX29GL033MBMC-90G MX29GL033MBMI- |
128M-BIT SINGLE VOLTAGE 3V ONLY UNIFORM SECTOR FLASH MEMORY 8M X 16 FLASH 3V PROM, 90 ns, PDSO56
|
Macronix International Co., Ltd.
http://
|
| S29GL064A11TFIR20 S29GL064A11TFIR22 S29GL016A10FAI |
4M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 1M X 16 FLASH 3V PROM, 100 ns, PBGA64
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 100 ns, PDSO56
2M X 16 FLASH 3V PROM, 100 ns, PBGA56
4M X 16 FLASH 3V PROM, 90 ns, PBGA64
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:48-TSOP; Memory Configuration:64K x 16; Memory Size:64MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes
4M X 16 FLASH 3V PROM, 90 ns, PDSO48
4M X 16 FLASH 3V PROM, 100 ns, PDSO48
|
Spansion, Inc.
SPANSION LLC
|
| K9K1G08U0M-YIB0 K9K1G08U0M-YCB0 |
128M x 8 Bit NAND Flash Memory
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K5P2880YCM |
Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit 1Mx8/512Kx16 Full CMOS SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MBM29FS12DH15PBT |
BURST MODE FLASH MEMORY CMOS 128M (8M X 16) BIT
|
SPANSION LLC
|
| W29GL128CH9C W29GL128CL9C |
128M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE
|
Winbond
|
| MX25L12839FZNW08G |
3V 128M-BIT [x 1/x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| MX29VL033MBTI-90G MX29VL033MTMC-90R MX29VL033MBMI- |
128M-BIT SINGLE VOLTAGE 3V ONLY UNIFORM SECTOR FLASH MEMORY 128兆位单电V时仅均匀部门闪存
|
Macronix International Co., Ltd.
|
